Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

نویسندگان

چکیده

Memristive valence change memory (VCM) cells show a strong non-linearity in the switching kinetics which is induced by temperature increase. In this respect, thermal crosstalk can be observed highly integrated crossbar arrays may impact resistance state of adjacent devices. Additionally, due to capacitance, VCM cell remain thermally active after pulse and thus influence conditions for possible subsequent pulse. By using finite element model array, it shown that spatio-temporal correlations occur are capable affecting resistive cells. This new functional behavior potentially used future neuromorphic computing applications.

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ژورنال

عنوان ژورنال: Advanced Functional Materials

سال: 2023

ISSN: ['1616-301X', '1616-3028']

DOI: https://doi.org/10.1002/adfm.202213943